| 最大源漏极电压Vds Drain-Source Voltage | 20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | |
| 最大漏极电流Id Drain Current | 30mA |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 7.5-12V |
| 耗散功率Pd Power Dissipation | 200mW/0.2W |
| Description & Applications | N-Channel MOS-Fieldeffect Triode, Depletion Mode High frequency stages up to 300 MHz. • Integrated gate protection diodes • Low feedback capacitance • Low noise figure • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC |
| 描述与应用 | N沟道MOS场效应三极管，耗尽模式 高达300 MHz的高频阶段 •集成的栅极保护二极管 •低反馈电容 •低噪声系数 •铅（Pb）免费组件 |