| 最大源漏极电压VdsDrain-Source Voltage | 50V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 20V |
| 最大漏极电流IdDrain Current | 250mA/0.25A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 10.5Ω@ VGS =4V, ID =30mA |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | 1~2.4V |
| 耗散功率PdPower Dissipation | 800mW/0.8W |
| Description & Applications | Ultrahigh-Speed Switching Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. • Composite type with 2 MOSFETs contained in a single package |
| 描述与应用 | 超高速开关应用 特点 •低导通电阻。 •超高速开关。 •4 V驱动。 •一个单一的包装中包含的2MOSFET的复合型 |