| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 60V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 40V |
| 集电极连续输出电流ICCollector Current(IC) | 600mA/0.6A |
| 截止频率fTTranstion Frequency(fT) | 250MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 100~300 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 400mV/0.4V |
| 耗散功率PcPower Dissipation | 200mW/0.2W |
| Description & Applications | Features •NPN Medium Power Transistor •BVCEO > 40V (IC = 1mA) •Complements the UMT4403 / SST4403 / MMST4403/ PN4403. |
| 描述与应用 | 特点 •NPN中等功率晶体管 •BVCEO>40V（IC=1MA） •补充UMT4403/ SST4403/ MMST4403/ PN4403。 |