| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 50V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 40V |
| 集电极连续输出电流ICCollector Current(IC) | 200mA/0.2A |
| 截止频率fTTranstion Frequency(fT) | 180MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 200 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 500mV/0.5V |
| 耗散功率PcPower Dissipation | 200mW/0.2W |
| Description & Applications | Features •NPN General Purpose Transistor •BVCEO minimum is 40V.( IC=1mA) •Complements the SST6839 |
| 描述与应用 | 特点 •NPN通用晶体管 •BVCEO最低为40V（IC=1MA） •补充SST6839 |