| 最大源漏极电压VdsDrain-Source Voltage | 30V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 20V |
| 最大漏极电流IdDrain Current | 250mA/0.25A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 2.5Ω@ VGS =2.5V, ID =10mA |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | 0.8~1.5V |
| 耗散功率PdPower Dissipation | 272mW/0.272W |
| Description & Applications | Small Signal MOSFET Features • Low Gate Charge for Fast Switching • Small Footprint − 30% Smaller than TSOP−6 • ESD Protected Gate • Pb−Free Package for Green Manufacturing (G Suffix) Applications • Low Side Load Switch • Li−Ion Battery Supplied Devices − Cell Phones, PDAs, DSC • Buck Converters • Level Shifts |
| 描述与应用 | 小信号MOSFET 特点 •低栅极电荷快速开关 • 小低印-30％小于TSOP-6 •ESD保护门 •面向绿色制造的无铅封装（G后缀） 应用 •低端负荷开关 •锂离子电池提供的设备 - 手机，掌上电脑，数码相机 •降压转换器 •电平转换 |