| 最大源漏极电压VdsDrain-Source Voltage | -20V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | -12V |
| 最大漏极电流IdDrain Current | -880mA/-0.88A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 1Ω@ VGS = -1.8V, ID = -0.2A |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -0.45V |
| 耗散功率PdPower Dissipation | 272mW/0.272W |
| Description & Applications | Trench Small Signal MOSFET Features • Leading Trench Technology for Low RDS(ON) Performance • Small Footprint Package (SC70-6 Equivalent) • ESD Protected Gate • Pb-Free Package is Available Applications • Load/Power Management • Charging Circuits • Load Switching • Cell Phones, Computing, Digital Cameras, MP3s and PDAs |
| 描述与应用 | 海沟小信号MOSFET 特点 •领先沟道技术低RDS（ON）性能 •小型封装（SC70-6等效） •ESD保护门 •无铅包装是可用 应用 •负载/功率管理 •充电电路？ •负载开关 •手机，电脑，数码相机，MP3和掌上电脑 |