| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 20V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 10V |
| 集电极连续输出电流ICCollector Current(IC) | 80mA |
| 截止频率fTTranstion Frequency(fT) | 8Ghz |
| 直流电流增益hFEDC Current Gain(hFE) | 50~300 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | |
| 耗散功率PcPower Dissipation | |
| Description & Applications | The RF Line NPN Silicon High-Frequency TRANSISTOR Designed for low noise, wide dynamic range front–end amplifiers and low–noise VCO’s. Available in a surface–mountable plastic packages. This Motorola series of small–signal plastic transistors offers superior quality and performance at low cost. • High Gain–Bandwidth Product fT = 8.0 GHz (Typ) @ 50 mA • Low Noise Figure NFmin = 1.6 dB (Typ) @ f = 1.0 GHz (MRF5711LT1, MRF571) • High Gain GNF = 17 dB (Typ) @ 30 mA/500 MHz (MMBR571LT1) • High Power Gain Gpe (matched) = 13.5 dB (Typ) (MRF5711LT1) • State–of–the–Art Technology Fine Line Geometry Ion–Implanted Arsenic Emitters Gold Top Metallization and Wires Silicon Nitride Passivation • Available in tape and reel packaging options: T1 suffix = 3,000 units per reel |
| 描述与应用 | RF线NPN硅 高频三极管 专为低噪声，宽动态范围前端放大器 低噪声VCO。可在一个表面贴装塑料封装。这 摩托罗拉系列小信号塑料晶体管提供卓越的品质和 以较低的成本性能。 |