| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 25V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 15V |
| 集电极连续输出电流ICCollector Current(IC) | 30mA |
| 截止频率fTTranstion Frequency(fT) | 38GHz |
| 直流电流增益hFEDC Current Gain(hFE) | 50~200 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | |
| 耗散功率PcPower Dissipation | |
| Description & Applications | The RF Line NPN Silicon High-Frequency TRANSISTOR Designed primarily for use in high–gain, low–noise small–signal amplifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching times |
| 描述与应用 | RF线NPN硅 高频三极管 设计主要用于高增益，低噪声小信号放大器 高达2.5 GHz。也可用在需要快速切换 |