| 最大源漏极电压VdsDrain-Source Voltage | 20V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 12V |
| 最大漏极电流IdDrain Current | 7A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 35mΩ@ VGS = 2.5V, ID = 2A |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | 0.5~1.3V |
| 耗散功率PdPower Dissipation | 1.4W |
| Description & Applications | N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • Low ON-resistance. • Suitable for lithim-ion battery use. • Drain common specification. • 2.5V drive. |
| 描述与应用 | N-沟道硅MOSFET 通用开关设备应用 特点 •低导通电阻。 •适合为lithim离子电池使用。 •漏共同的规范。 •2.5V驱动。 |