| 最大源漏极电压Vds Drain-Source Voltage | 60V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 280mA/0.28A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 3.2Ω/Ohm @160mA,4,5V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.6-1.4 |
| 耗散功率Pd Power Dissipation | 500mW/0.5W |
| Description & Applications | SIPMOS ®Small-Signal-Transistor • N-channel • Enhancement mode • Logic level • dv /dt rated |
| 描述与应用 | SIPMOS®小信号晶体管 •N沟道 •增强模式 •逻辑电平 •dv / dt的额定 |