| 最大源漏极电压Vds Drain-Source Voltage | 350V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 100mA/0.1A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 7.8Ω/Ohm 100mA,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1.2V |
| 耗散功率Pd Power Dissipation | 360mW/0.36W |
| Description & Applications | SIPMOS ®Small-Signal-Transistor • N-channel • Depletion mode • dv /dt rated |
| 描述与应用 | SIPMOS ®Small-Signal-Transistor •N沟道 •耗尽模式 •dv / dt的额定 |