| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 90V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 80V |
| 集电极连续输出电流ICCollector Current(IC) | 1A |
| 截止频率fTTranstion Frequency(fT) | 100MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 40~120 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 500mV/0.5V |
| 耗散功率PcPower Dissipation | 1.5W |
| Description & Applications | NPN transistors in miniature plastic envelopes for application in thick and thin-film circults. They are intended for use in telephony and general in industrial applications. |
| 描述与应用 | NPN晶体管微型塑料信封中，为在厚和薄膜circults的应用。 它们的目的是用于在电话和一般在工业应用中。 |