| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 20V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 12V |
| 集电极连续输出电流ICCollector Current(IC) | 50mA |
| 截止频率fTTranstion Frequency(fT) | 6Ghz |
| 直流电流增益hFEDC Current Gain(hFE) | 40~150 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 400mV/0.4V |
| 耗散功率PcPower Dissipation | 200mW/0.2W |
| Description & Applications | Silicon NPN Planar RF Transistor Applications Wide band amplifier up to GHz range. Features High power gain High transition frequency Low noise figure |
| 描述与应用 | 硅NPN平面RF晶体管 应用 宽频带放大器高达GHz范围内。 特点 高功率增益 高转换频率 低噪声系数 |