| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 18V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 10V |
| 集电极连续输出电流ICCollector Current(IC) | 50mA |
| 截止频率fTTranstion Frequency(fT) | 2GHz |
| 直流电流增益hFEDC Current Gain(hFE) | 25 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | |
| 耗散功率PcPower Dissipation | 250mW/0.25W |
| Description & Applications | NPN 2 GHz wideband transistor FEATURES • Very low intermodulation distortion • Very high power gain. APPLICATIONS • Thick and thin-film circuits. DESCRIPTION NPN wideband transistor in a plastic SOT23 package. |
| 描述与应用 | 2 GHz的宽带晶体管NPN 特点 •非常低的互调失真 •非常高的功率增益。 应用 •厚薄膜电路。 说明 NPN宽带晶体管在一个塑料 SOT23封装。 |