| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 20V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 15V |
| 集电极连续输出电流ICCollector Current(IC) | 25mA |
| 截止频率fTTranstion Frequency(fT) | 5GHz |
| 直流电流增益hFEDC Current Gain(hFE) | 90 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | |
| 耗散功率PcPower Dissipation | 300mW/0.3W |
| Description & Applications | NPN 5 GHz wideband transistor FEATURES • High power gain • Low noise figure • Low intermodulation distortion. APPLICATIONS • RF wideband amplifiers and oscillators. |
| 描述与应用 | 5 GHz的宽带晶体管NPN 特点 •高功率增益 •低噪声系数 •低互调失真。 应用 •射频宽带放大器和振荡器。 |