| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 10V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 8V |
| 集电极连续输出电流ICCollector Current(IC) | 10mA |
| 截止频率fTTranstion Frequency(fT) | 7.5Ghz |
| 直流电流增益hFEDC Current Gain(hFE) | 30~200 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | |
| 耗散功率PcPower Dissipation | 80mW |
| Description & Applications | NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems (pager,cordless telephone) at collector currents from 0.2mA to 8mA • fT = 7.5GHz F = 1.5dB at 900MHz |
| 描述与应用 | NPN硅RF晶体管 •低噪声，在移动通信系统当集电极电流0.2毫安到8mA时（寻呼机，无绳电话）低功耗放大器 • fT = 7.5GHz F = 1.5dB at 900MHz |