| 最大源漏极电压VdsDrain-Source Voltage | 20v |
| 栅源极击穿电压V(BR)GSGate-Source Voltage | -20v |
| 漏极电流(Vgs=0V)IDSSDrain Current | 2.5~6ma |
| 关断电压Vgs(off)Gate-Source Cut-off Voltage | -2.5v |
| 耗散功率PdPower Dissipation | 150mW/0.15W |
| Description & Applications | •N-Channel Junction Silicon FET •Low-Noise HF Amplifier Applications •AM tuner RF amplifier. •Low-noise amplifier. |
| 描述与应用 | •N沟道结硅FET •低噪声高频放大器的应用 •AM调谐器RF放大器。 •低噪声放大器。 |