| 最大源漏极电压Vds Drain-Source Voltage | 30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 5A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.06Ω/Ohm @2.5A,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1.5-2.5V |
| 耗散功率Pd Power Dissipation | 2W |
| Description & Applications | MOS FIELD EFFECT TRANSISTOR N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2157 is a N-channel MOS FET of a vertical type and is a switching element that can be directly driven by the output of an IC operating at 5 V. This product has a low ON resistance and superb switching characteristics and is ideal for driving the actuators and DC/DC converters. Features N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING New package intermediate between small-signal and power models Can be directly driven by output of 5-V IC Low ON resistance |
| 描述与应用 | MOS FIELD EFFECT TRANSISTOR N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2157 is a N-channel MOS FET of a vertical type and is a switching element that can be directly driven by the output of an IC operating at 5 V. This product has a low ON resistance and superb switching characteristics and is ideal for driving the actuators and DC/DC converters. 特性 N沟道MOS FET高速开关 新包小信号和电源之间的中间 模型 5-V IC输出可直接驱动 低导通电阻 |