| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 60V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 50V |
| 集电极连续输出电流ICCollector Current(IC) | 1A |
| 截止频率fTTranstion Frequency(fT) | 150MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 120~270 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 400mV/0.4V |
| 耗散功率PcPower Dissipation | 500mW/0.5W |
| Description & Applications | Features •Medium power transistor (50V, 1A) •Low saturation voltage, typically VCE(sat)=0.12V at IC/IB=500mA/50mA •PC=2W (on 40×40×0.7mm ceramic board) •Complements the 2SA1900 |
| 描述与应用 | 特点 •中等功率晶体管（50V，1A） •低饱和电压，通常VCE（星期六）=0.12V IC / IB=500mA/50mA •PC= 2W（40×40×0.7毫米的陶瓷板） •补充2SA1900 |