| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 30V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 25V |
| 集电极连续输出电流ICCollector Current(IC) | 2A |
| 截止频率fTTranstion Frequency(fT) | 260MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 800~3200 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 150mV/0.15V |
| 耗散功率PcPower Dissipation | 100mW/0.1W |
| Description & Applications | Features •NPN Epitaxial planar silicon transistor •high current capacity ••adoption of MBIT process •high DC current gain •low collector-to-emitter saturation voltage •high Vebo |
| 描述与应用 | 特点 •NPN外延平面硅晶体管 •高电流容量 •通过MBIT过程 •高直流电流增益 •低集电极 - 发射极饱和电压 •高VEBO |