| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 15V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 15V |
| 集电极连续输出电流ICCollector Current(IC) | 1A |
| 截止频率fTTranstion Frequency(fT) | 200MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 135~600 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | <240mV/0.24V |
| 耗散功率PcPower Dissipation | 250mW/0.25W |
| Description & Applications | Features • PNP/NPN Epitaxial planar Silicon transistor • Low frequency General purpose Amp application • large current capacity • Low collector to emitter saturation voltage |
| 描述与应用 | 特点 •PNP/ NPN外延平面硅晶体管 •低频通用放大器应用 •大电流容量 •低集电极到发射极饱和电压 |