| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 15V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 10V |
| 集电极连续输出电流ICCollector Current(IC) | 100mA/0.1A |
| 截止频率fTTranstion Frequency(fT) | 240MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 560~2700 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 150mV/0.15V |
| 耗散功率PcPower Dissipation | 200mW/0.2W |
| Description & Applications | • High frequency amplifier transistor ,RF switching Features •high transition frequency ,typically f T= 240 MHz •high HFE |
| 描述与应用 | •高频晶体管放大器，RF开关 特点 •高转换频率，通常F T=240兆赫 •高HFE |