| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) |
−60V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) |
−50V |
| 集电极连续输出电流ICCollector Current(IC) |
−100mA/-0.1A |
| 截止频率fTTranstion Frequency(fT) |
180MHz |
| 直流电流增益hFEDC Current Gain(hFE) |
300~600 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage |
-180mV/-0.18V |
| 耗散功率PcPoWer Dissipation |
200mW/0.2W |
| Description & Applications |
PNP SILICON EPITAXIAL TRANSISTOR FEATURES • High DC current gain: hFE2 = 200 TYP. • High voltage: VCEO = −50 V • Can be automatically mounted |
| 描述与应用 |
PNP硅外延晶体管 特点 •高直流电流增益：HFE2=200 TYP。 •高电压：VCEO=-50 V •可自动安装 |