| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | −20V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −15V |
| 集电极连续输出电流ICCollector Current(IC) | -50mA |
| 截止频率fTTranstion Frequency(fT) | 3GHz |
| 直流电流增益hFEDC Current Gain(hFE) | 15 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | |
| 耗散功率PcPoWer Dissipation | 250mW/0.25W |
| Description & Applications | PNP Epitaxial planar silicon transistor High-Frequency amp application high cutoff frequency; high power gain； small noise figure |
| 描述与应用 | PNP外延平面硅晶体管 高频放大器的应用 高截止频率; 高功率增益; 噪声系数小 |