| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -300V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −300V |
| 集电极连续输出电流ICCollector Current(IC) | -50mA |
| 截止频率fTTranstion Frequency(fT) | 70MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 100~200 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | -1000mV/-1V |
| 耗散功率PcPoWer Dissipation | 250mW/0.25W |
| Description & Applications | PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR high breakdown voltage； excellent DC current gain ratio |
| 描述与应用 | PNP硅平面高压晶体管 击穿电压高; 卓越的DC电流增益比 |