| 最大源漏极电压Vds Drain-Source Voltage |
60V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage |
30V |
| 最大漏极电流Id Drain Current |
300mA/0.3A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance |
2.8Ω/Ohm @500mA,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage |
1-2.5V |
| 耗散功率Pd Power Dissipation |
830mW/0.83W |
| Description & Applications |
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features N-channel TrenchMOS FET Logic level threshold compatible Very fast switching Surface-mounted package TrenchMOS technology |
| 描述与应用 |
N沟道增强型场效应晶体管 特性 N-沟道FETTrenchMOS 兼容逻辑电平阈 开关速度非常快 表面贴装封装 TrenchMOS技术 |