反向电压Vr
Reverse Voltage(Vr) |
30V |
平均整流电流Io
Average Rectified Current(Io) |
0.15A |
最大正向压降VF
Forward Voltage(Vf) |
1V |
结电容值Cj
Junction capacitance(Cj) |
|
耗散功率
Pd Power Dissipation |
|
| Description & Applications |
• Schottky Barrier Diodes (SBD) • Silicon epitaxial planar type • For switching circuits • Super-small SS-mini type 2-pin package • Allowing high-density mounting • Low forward rise voltage (VF) and satisfactory wave detection efficiency (η) • Small temperature coefficient of forward characteristic • Extremely low reverse current IR |
| 描述与应用 |
•肖特基势垒二极管（SBD） •硅外延平面型 •对于开关电路 •超小SS迷你型2-pin封装 •允许高密度安装 •低正向上升电压（VF）和满意的波检测效率（η） •温度系数小的正向特性 •极低的反向电流IR |