| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) |
-40V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) |
−40V |
| 集电极连续输出电流ICCollector Current(IC) |
−200mA/-0.2A |
| 截止频率fTTranstion Frequency(fT) |
250MHz |
| 直流电流增益hFEDC Current Gain(hFE) |
100~300 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage |
-400mV/-0.4V |
| 耗散功率PcPoWer Dissipation |
225mW/0.225W |
| Description & Applications |
PNP epitaxial planar transistor General Purpose Transistors FEATURE Pb−Free Package May be Available |
| 描述与应用 |
PNP外延平面晶体管 通用晶体管 特写 可能提供无铅封装 |