| 最大源漏极电压VdsDrain-Source Voltage |
25v |
| 栅源极击穿电压V(BR)GSGate-Source Voltage |
-25v |
| 漏极电流(Vgs=0V)IDSSDrain Current |
45A |
| 关断电压Vgs(off)Gate-Source Cut-off Voltage |
1~2v |
| 耗散功率PdPower Dissipation |
1.5W |
| Description & Applications |
•Power MOSFET •Low RDS(on) to Minimize Conduction Loss • Low Gate Charge • Optimized for High Side Switching Requirements in High−Efficiency DC−DC Converters |
| 描述与应用 |
•功率MOSFET •低的RDS（on）减少传导损耗 •低栅极电荷 •优化高效率的DC-DC转换器的高侧开关需求 |