| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 35V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 30V |
| 集电极连续输出电流ICCollector Current(IC) | 500mA/0.5A |
| 截止频率fTTranstion Frequency(fT) | 300MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 200~400 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 250mV/0.25V |
| 耗散功率PcPower Dissipation | 150mW/0.15W |
| Description & Applications | NPN Silicon epitaxial Transistors Audio frequency low power amplifier applications Driver stage amplifier applications Switching applications Features Excellent hFE linearity Complementary to 2SA1182 |
| 描述与应用 | NPN硅外延晶体管 音频频率低功耗放大器应用 驱动级放大器的应用 开关应用 特点 优秀HFE线性 互补型2SA1182 |