| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) |
60V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) |
40V |
| 集电极连续输出电流ICCollector Current(IC) |
600MA/0.6A |
| 截止频率fTTranstion Frequency(fT) |
250MHZ |
| 直流电流增益hFEDC Current Gain(hFE) |
40~300 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage |
0.75V |
| 耗散功率PcPower Dissipation |
350MW/0.35W |
| Description & Applications |
Switching Transistor. NPN Epitaxial Silicon Transistor. |
| 描述与应用 |
开关晶体管。 NPN外延硅晶体管。 |