| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -40V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | -40V |
| 集电极连续输出电流IC Collector Current(IC) | -200mA |
| Q1基极输入电阻R1 Input Resistance(R1) | 250MHz |
| Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 300 |
| Q1电阻比(R1/R2) Q1 Resistance Ratio | -400mV |
| Q2基极输入电阻R1 Input Resistance(R1) | 150mW |
| Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | Features • Dual General Purpose Transistors • hFE, 100−300 • Low VCE(sat), ≤ 0.4 V • Simplifies Circuit Design • Reduces Board Space • Reduces Component Count • Available in 8 mm, 7−inch/3,000 Unit Tape and Reel • Pb−Free Packages are Available |
| Q2电阻比(R1/R2) Q2 Resistance Ratio | 特点 •双通用晶体管 •HFE，100-300 •低VCE（sat），≤0.4 V •简化电路设计 •缩小板级空间 •减少元件数量 •可在8毫米，7寸/3,000组带和卷轴 •无铅包可用 |
| 直流电流增益hFE DC Current Gain(hFE) | |
| 截止频率fT Transtion Frequency(fT) | |
| 耗散功率Pc Power Dissipation | |
| Description & Applications | |
| 描述与应用 | |