| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -60V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −60V |
| 集电极连续输出电流ICCollector Current(IC) | −500mA/-0.5A |
| 截止频率fTTranstion Frequency(fT) | 50MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 100 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | -250mV/-0.25V |
| 耗散功率PcPoWer Dissipation | 200mW/0.2W |
| Description & Applications | 500 mA PNP general-purpose transistors Features High current (max. 500 mA) Applications Intended for telephony and professional communication equipment. |
| 描述与应用 | 500毫安PNP通用晶体管 特点 高电流（最大500毫安） 应用 用于电话和专业通信设备。 |