| 最大源漏极电压VdsDrain-Source Voltage | -20V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 8V |
| 最大漏极电流IdDrain Current | -2.6A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 250mΩ@ VGS = -1.5V, ID = -250mA |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -0.3~-1.0V |
| 耗散功率PdPower Dissipation | 700mW/0.7W |
| Description & Applications | TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ) ○ Power Management Switch Applications • 1.5-V drive • Low ON-resistance:RDS(ON) = 250 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 178 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 133 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 103 mΩ (max) (@VGS = -4.5 V) |
| 描述与应用 | 东芝场效应晶体管的硅P沟道MOS型（U-MOSⅥ） ○电源管理开关应用 •1.5-V驱动器 •低导通电阻：RDS(ON) = 250 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 178 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 133 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 103 mΩ (max) (@VGS = -4.5 V) |