| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | −50V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −45V |
| 集电极连续输出电流ICCollector Current(IC) | −100mA/-0.1A |
| 截止频率fTTranstion Frequency(fT) | 100MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 420~800 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | −650mV/-0.65V |
| 耗散功率PcPoWer Dissipation | 300mW/0.3W |
| Description & Applications | General Purpose Transistors PNP Silicon Features • Pb−Free Packages are Available |
| 描述与应用 | 通用晶体管 PNP硅 特点 •无铅包可用 |