| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -40V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −40V |
| 集电极连续输出电流ICCollector Current(IC) | −600mA/- 0.6A |
| 截止频率fTTranstion Frequency(fT) | 200MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 100~300 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | -750mV/-0.75V |
| 耗散功率PcPoWer Dissipation | 225mW/0.225W |
| Description & Applications | PNP epitaxial planar transistor Description The HMBT4403 is designed for general purpose applications requiring high breakdown voltages. |
| 描述与应用 | PNP外延平面晶体管 描述 HMBT4403是专为一般用途的应用，要求高的击穿电压。 |