| 最大源漏极电压VdsDrain-Source Voltage | 20V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 10V |
| 最大漏极电流IdDrain Current | 2A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 180mΩ@ VGS = 2.5V, ID = 0.5A |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | 0.4~1.3V |
| 耗散功率PdPower Dissipation | 900mW/0.9W |
| Description & Applications | N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • 2.5V drive. • Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting. |
| 描述与应用 | N-沟道硅MOSFET 超高速开关应用 特点 •低导通电阻。 •超高速开关。 •2.5V驱动。 •复合型2包含在一个单一的包装，促进高密度安装的MOSFET。 |