| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 80V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 60V |
| 集电极连续输出电流ICCollector Current(IC) | 3A |
| 截止频率fTTranstion Frequency(fT) | 75MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 250~550 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 400mV/0.4V |
| 耗散功率PcPower Dissipation | 2W |
| Description & Applications | •NPN Low Saturation Transistor •These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous. |
| 描述与应用 | •NPN低饱和晶体管 •这些器件的设计具有高电流增益和低饱和电压与集电极电流连续高达3A |