| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 300V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 300V |
| 集电极连续输出电流ICCollector Current(IC) | 50mA |
| 截止频率fTTranstion Frequency(fT) | 80MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 60~150 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | <500mV/0.5V |
| 耗散功率PcPower Dissipation | 150mW/0.15W |
| Description & Applications | Features •Silicon NPN Epitaxial •High breakdown voltage VCEO = 300 V •Small Cob Cob = 1.5 pF Typ. |
| 描述与应用 | 特点 •NPN硅外延 •高击穿电压VCEO=300 V •小COB COB=1.5 pF的典型 |