| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | -50V |
| 集电极连续输出电流IC Collector Current(IC) | -100mA/-0.1A |
| 基极输入电阻R1 Input Resistance(R1) | 10KΩ/Ohm |
| 基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 47KΩ/Ohm |
| 电阻比(R1/R2) Resistance Ratio | 0.21 |
| 直流电流增益hFE DC Current Gain(hFE) | 70 |
| 截止频率fT Transtion Frequency(fT) | 200MHz |
| 耗散功率Pc Power Dissipation | 0.25W/250mW |
| Description & Applications | Feature • PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1= 10kΩ , R2= 47kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package |
| 描述与应用 | 特点 •PNP硅数字晶体管 •开关电路，逆变器，接口电路，驱动电路 •内置偏置电阻（R1=10KΩ，R2=47KΩ） •对于6-PIN封装：2（电流）的内部具有良好的匹配隔离晶体管在一个封装中 |