| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -90V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −80V |
| 集电极连续输出电流ICCollector Current(IC) | -1A |
| 截止频率fTTranstion Frequency(fT) | 100MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 100~300 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | −500mV/-0.5V |
| 耗散功率PcPoWer Dissipation | 1.5W |
| Description & Applications | PNP silicon transistor，in a microminiature plastic envelope ，intended for medium power switching and general purpose amplifier application in trick and thin-film circuits |
| 描述与应用 | PNP硅晶体管，在一个超小型的塑料外壳，适用于中等功率开关和通用放大器应用在特技和薄膜电路 |