| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) |
-35V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) |
−30V |
| 集电极连续输出电流ICCollector Current(IC) |
−500mA/-0.5A |
| 截止频率fTTranstion Frequency(fT) |
200MHz |
| 直流电流增益hFEDC Current Gain(hFE) |
80~160 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage |
-100mV/-0.1V |
| 耗散功率PcPoWer Dissipation |
150mW/0.15W |
| Description & Applications |
silicon PNP epitaxial driver stage amplifier application； switching applications |
| 描述与应用 |
硅PNP外延 驱动级放大器的应用; 开关应用 |