| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 15V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 12V |
| 集电极连续输出电流ICCollector Current(IC) | 500mA/0.5A |
| 截止频率fTTranstion Frequency(fT) | 130MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 300~600 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 15mV |
| 耗散功率PcPower Dissipation | 100mW/0.1W |
| Description & Applications | Silicon NPN epitaxial type general purpose amplifyier application switching and muting switch application ■ Features • low saturation voltage Vce（sat）=15mV • large collector current iC=500mA |
| 描述与应用 | NPN硅外延型 通用amplifyier应用 开关和静音开关的应用 ■特点 •低饱和电压VCE（SAT）=15mV的 •大的集电极电流IC =500毫安 |