| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -60V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −60V |
| 集电极连续输出电流ICCollector Current(IC) | −500mA/-0.5A |
| 截止频率fTTranstion Frequency(fT) | 200MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 100~300 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | −500mV/-0.5V |
| 耗散功率PcPoWer Dissipation | 200mW/0.2W |
| Description & Applications | PNP Silicon epitaxial planar type FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION FEATURE High collector current Low collector to emitter saturation voltage |
| 描述与应用 | PNP硅外延平面型 通用的高电流驱动应用 特写 高集电极电流 集电极到发射极饱和电压低 |