| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -300V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −300V |
| 集电极连续输出电流ICCollector Current(IC) | −500mA/-0.5A |
| 截止频率fTTranstion Frequency(fT) | 50MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 40 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | −500mV/-0.5V |
| 耗散功率PcPoWer Dissipation | 300mW/0.3W |
| Description & Applications | PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • Epitaxial Planar Die Construction • Complementary NPN Types Available (MMBTA42) • Ideal for Medium Power Amplification and Switching • Lead, Halogen and Antimony Free, RoHS Compliant • Qualified to AEC-Q101 Standards for High Reliability |
| 描述与应用 | PNP小信号表面贴装晶体管 特点 •外延平面模具建设 •互补NPN类型可用（MMBTA42） •非常适于中等功率放大和开关 •铅，卤素和无锑，符合RoHS标准 •符合AEC-Q101标准的高可靠性 |