| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 300V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 300V |
| 集电极连续输出电流ICCollector Current(IC) | 500mA/0.5A |
| 截止频率fTTranstion Frequency(fT) | 50Mhz |
| 直流电流增益hFEDC Current Gain(hFE) | 25 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 500mV/0.5V |
| 耗散功率PcPower Dissipation | 350mW/0.35W |
| Description & Applications | FEATURES • SOT-23 Plastic-Encapsulate Transistors • High breakdown voltage • Low collector-emitter saturation voltage • Complementary to MMBTA92 (PNP) |
| 描述与应用 | 特点 •SOT-23塑料封装晶体管 •高击穿电压 •低集电极 - 发射极饱和电压 •互补MMBTA92（PNP） |