| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 20V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 10V |
| 集电极连续输出电流ICCollector Current(IC) | 50mA |
| 截止频率fTTranstion Frequency(fT) | 8.5Ghz |
| 直流电流增益hFEDC Current Gain(hFE) | 200 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | |
| 耗散功率PcPower Dissipation | 250mW/0.25W |
| Description & Applications | UHF wideband transistor FEATURES • Small size • Low noise • Low distortion • High gain • Gold metallization ensures excellent reliability. APPLICATIONS • Communication and instrumentation systems. DESCRIPTION Silicon NPN transistor in a surface mount 3-pin SOT323 package. The transistor is primarily intended for wideband applications in the GHz-range in the RF front end of analog and digital cellular telephones, cordless phones, radar detectors, pagers and satellite TV-tuners. |
| 描述与应用 | UHF宽带晶体管 特点 •小尺寸 •低噪音 •低失真 •高增益 •黄金金属确保卓越的可靠性。 应用 •通信和仪器仪表系统。 说明 硅NPN晶体管在一个表面贴装3引脚SOT323 包。晶体管主要用于宽带 在GHz的范围内的应用中的模拟RF前端 和数字蜂窝电话，无绳电话，雷达 探测器，传呼机和卫星电视调谐器。 |