| 最大源漏极电压VdsDrain-Source Voltage | 20v |
| 栅源极击穿电压V(BR)GSGate-Source Voltage | -20v |
| 漏极电流(Vgs=0V)IDSSDrain Current | 6~32ma |
| 关断电压Vgs(off)Gate-Source Cut-off Voltage | -2.5v |
| 耗散功率PdPower Dissipation | 150mW/0.15W |
| Description & Applications | •Field Effect Transistor Silicon N Channel Junction Type Low-Frequency General-Purpose Amplifier Applications Applications Variable resistors, analog switches, AF amplifier, constant-current circuit. Features Adoption of FBET process. Ultrasmall-sized package permitting sets to be made smaller and slimmer. |
| 描述与应用 | •场效应晶体管的硅N沟道结型 低频通用 放大器的应用 应用 可变电阻器，模拟开关，AF放大器， 恒流电路。 特点 通过过程FBET。 超小尺寸封装，允许集 体积更小，更薄。 |