| 最大源漏极电压VdsDrain-Source Voltage | -20V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 8V |
| 最大漏极电流IdDrain Current | -11.4A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 15mΩ@ VGS = -4.5V, ID = -11.4A |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -0.4V~-1.0V |
| 耗散功率PdPower Dissipation | 3.6W |
| Description & Applications | P-Channel 20-V (D-S) MOSFET FEATURES - TrenchFET Power MOSFET: 1.8-V Rated -New PowerPAK Package − Low Thermal Resistance, RthJC − Low 1.07-mm Profile APPLICATIONS - Load Switch |
| 描述与应用 | P沟道20-V（D-S）的MOSFET 特点 - TrenchFET 功率MOSFET - 低热阻，RthJC 应用 - 负载开关 |