| 最大源漏极电压VdsDrain-Source Voltage | 30V/-30V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 20V/20V |
| 最大漏极电流IdDrain Current | 2.5A/-1.8A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 175mΩ@ VGS =4.5V, ID =2A/360mΩ@ VGS =-4.5V, ID =-1.2A |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | 1V/-1V |
| 耗散功率PdPower Dissipation | 1.15W |
| Description & Applications | N- and P-Channel 30-V (D-S) MOSFET |
| 描述与应用 | N沟道和P-通道 30-V（D-S）的MOSFET |